BC636TA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

4.58mm

Packaging :

Tape and Box (TB)

Current Rating :

-1A

Base Part Number :

BC636

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mount :

Through Hole

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

-500mV

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Weight :

240mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Pbfree Code :

yes

Qualification Status :

Not Qualified

Transistor Type :

PNP

Power Dissipation :

1W

hFE Min :

40

Published :

2009

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Transition Frequency :

100MHz

Height :

4.58mm

Max Breakdown Voltage :

45V

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

45V

Gain Bandwidth Product :

100MHz

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Max Collector Current :

1A

Operating Temperature :

150°C TJ

Voltage - Rated DC :

-45V

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

BOTTOM

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

3.86mm

Collector Base Voltage (VCBO) :

-45V

Number of Terminations :

3

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

-5V

Factory Lead Time :

2 Weeks

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector Emitter Breakdown Voltage :

45V

Max Power Dissipation :

1W