APTM20DAM08TG
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- Mfr.Part #
- APTM20DAM08TG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 208A SP4
- Stock
- 12,893
- In Stock ：
- 12,893
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Rise Time :
- 64ns
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Terminal Position :
- UPPER
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Published :
- 2012
- Package / Case :
- SP4
- Turn On Delay Time :
- 32 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 832A
- Drain to Source Voltage (Vdss) :
- 200V
- Pin Count :
- 12
- Pbfree Code :
- yes
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Chassis Mount, Screw
- Current - Continuous Drain (Id) @ 25°C :
- 208A Tc
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- Fall Time (Typ) :
- 116 ns
- Factory Lead Time :
- 36 Weeks
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Terminal Finish :
- TIN SILVER COPPER
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 781W Tc
- JESD-609 Code :
- e1
- Power Dissipation :
- 781W
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 200V
- Terminal Form :
- UNSPECIFIED
- Operating Temperature :
- -40°C~150°C TJ
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 104A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 88 ns
- Continuous Drain Current (ID) :
- 208A
- Number of Terminations :
- 12
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- APTM20DAM08TG
N-Channel Bulk 10m Ω @ 104A, 10V ±30V 14400pF @ 25V 280nC @ 10V 200V SP4
APTM20DAM08TG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 14400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 208A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 88 ns.Its maximum pulsed drain current is 832A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 32 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM20DAM08TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 208A
the turn-off delay time is 88 ns
based on its rated peak drain current 832A.
a 200V drain to source voltage (Vdss)
APTM20DAM08TG Applications
There are a lot of Microsemi Corporation
APTM20DAM08TG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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