APTM20DAM08TG
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- Mfr.Part #
- APTM20DAM08TG
- Manufacturer
- Microchip Technology
- Package / Case
- SP4
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 208A SP4
- Stock
- 12,893
- In Stock ：
- 12,893
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 88 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 280nC @ 10V
- Factory Lead Time :
- 36 Weeks
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 116 ns
- Rise Time :
- 64ns
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -40°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 208A Tc
- Pin Count :
- 12
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Packaging :
- Bulk
- Drain to Source Voltage (Vdss) :
- 200V
- Pulsed Drain Current-Max (IDM) :
- 832A
- Number of Pins :
- 4
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Number of Terminations :
- 12
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 200V
- Turn On Delay Time :
- 32 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Chassis Mount
- Case Connection :
- Isolated
- JESD-609 Code :
- e1
- Power Dissipation :
- 781W
- Mount :
- Chassis Mount, Screw
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 104A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND THERMISTOR
- Power Dissipation-Max :
- 781W Tc
- Continuous Drain Current (ID) :
- 208A
- Package / Case :
- SP4
- Datasheets
- APTM20DAM08TG
N-Channel Bulk 10m Ω @ 104A, 10V ±30V 14400pF @ 25V 280nC @ 10V 200V SP4
APTM20DAM08TG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 14400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 208A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 88 ns.Its maximum pulsed drain current is 832A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 32 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM20DAM08TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 208A
the turn-off delay time is 88 ns
based on its rated peak drain current 832A.
a 200V drain to source voltage (Vdss)
APTM20DAM08TG Applications
There are a lot of Microsemi Corporation
APTM20DAM08TG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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