APTM20AM10FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 5mA

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Factory Lead Time :

36 Weeks

Packaging :

Bulk

Pulsed Drain Current-Max (IDM) :

700A

Terminal Form :

UNSPECIFIED

Number of Elements :

2

JESD-609 Code :

e1

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

81 ns

Power Dissipation :

694W

Max Power Dissipation :

694W

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Chassis Mount

Case Connection :

Isolated

Rise Time :

56ns

RoHS Status :

RoHS Compliant

Package / Case :

SP4

Fall Time (Typ) :

99 ns

ECCN Code :

EAR99

Turn On Delay Time :

28 ns

Radiation Hardening :

No

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Half Bridge)

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Mount :

Chassis Mount, Screw

Pbfree Code :

yes

FET Feature :

Standard

Continuous Drain Current (ID) :

175A

Number of Terminations :

12

Terminal Finish :

TIN SILVER COPPER

Number of Pins :

4

Pin Count :

12