APTM10DDAM09T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

70ns

Additional Feature :

AVALANCHE RATED

Package / Case :

SP3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Pbfree Code :

yes

Factory Lead Time :

22 Weeks

Case Connection :

Isolated

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Packaging :

Bulk

DS Breakdown Voltage-Min :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

390W

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Mount :

Chassis Mount, Screw

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

Number of Elements :

2

Transistor Application :

SWITCHING

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Mounting Type :

Chassis Mount

Power Dissipation :

390W

Number of Terminations :

25

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Pin Count :

25

Turn-Off Delay Time :

95 ns

Continuous Drain Current (ID) :

139A

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

125 ns

Turn On Delay Time :

35 ns

Drain-source On Resistance-Max :

0.01Ohm

Radiation Hardening :

No