APT50GT120B2RDQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Power - Max :

625W

Transistor Application :

POWER CONTROL

Max Power Dissipation :

625W

Polarity/Channel Type :

N-Channel

Factory Lead Time :

29 Weeks

Published :

1999

Gate Charge :

340nC

Current - Collector Pulsed (Icm) :

150A

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Series :

Thunderbolt IGBT®

Case Connection :

COLLECTOR

Pbfree Code :

yes

JESD-609 Code :

e3/e1

Collector Emitter Breakdown Voltage :

1.2kV

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Turn On Time :

77 ns

Switching Energy :

2330μJ (off)

Collector Emitter Voltage (VCEO) :

1.2kV

Number of Elements :

1

Test Condition :

800V, 50A, 4.7 Ω, 15V

Input Type :

Standard

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

303 ns

Number of Terminations :

3

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

Terminal Finish :

PURE MATTE TIN/TIN SILVER COPPER

IGBT Type :

NPT

Element Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mount :

Through Hole

ECCN Code :

EAR99

Td (on/off) @ 25°C :

24ns/230ns

Max Collector Current :

94A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube