APT5010JLLU3

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Series :

POWER MOS 7®

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Rds On (Max) @ Id, Vgs :

100m Ω @ 23A, 10V

Width :

25.4mm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

378W Tc

Power Dissipation :

378W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

500V

ECCN Code :

EAR99

Packaging :

Bulk

Continuous Drain Current (ID) :

41A

Factory Lead Time :

36 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Number of Elements :

1

Fall Time (Typ) :

3 ns

Number of Terminations :

4

Package / Case :

SOT-227-4, miniBLOC

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount, Screw

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Length :

38.2mm

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

RoHS Status :

RoHS Compliant

Number of Pins :

4

Rise Time :

15ns

Published :

2004

Drain to Source Voltage (Vdss) :

500V

Case Connection :

Isolated

Pin Count :

4

Weight :

30.000004g

Height :

9.6mm

Turn-Off Delay Time :

25 ns

Mounting Type :

Chassis Mount