APT5010JVRU3
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- Mfr.Part #
- APT5010JVRU3
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A SOT227
- Stock
- 16,592
- In Stock ：
- 16,592
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Factory Lead Time :
- 36 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Element Configuration :
- Single
- Weight :
- 30.000004g
- Turn On Delay Time :
- 18 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2006
- Rise Time :
- 16ns
- Drain to Source Voltage (Vdss) :
- 500V
- Pbfree Code :
- yes
- Width :
- 25.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 44A
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 22A, 10V
- Mounting Type :
- Chassis Mount
- Turn-Off Delay Time :
- 54 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 312nC @ 10V
- Number of Terminations :
- 4
- Power Dissipation :
- 450W
- DS Breakdown Voltage-Min :
- 500V
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- UNSPECIFIED
- Height :
- 9.6mm
- Power Dissipation-Max :
- 450W Tc
- Terminal Position :
- UPPER
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 7410pF @ 25V
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Fall Time (Typ) :
- 5 ns
- Mount :
- Chassis Mount, Screw
- Length :
- 38.2mm
- ECCN Code :
- EAR99
- Datasheets
- APT5010JVRU3
N-Channel Bulk 100m Ω @ 22A, 10V ±30V 7410pF @ 25V 312nC @ 10V 500V SOT-227-4, miniBLOC
APT5010JVRU3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7410pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 44A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
APT5010JVRU3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
the turn-off delay time is 54 ns
a 500V drain to source voltage (Vdss)
APT5010JVRU3 Applications
There are a lot of Microsemi Corporation
APT5010JVRU3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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