APT5010B2FLLG
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- Mfr.Part #
- APT5010B2FLLG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 46A T-MAX
- Stock
- 38,271
- In Stock ：
- 38,271
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Series :
- POWER MOS 7®
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Power Dissipation :
- 520W
- Turn-Off Delay Time :
- 25 ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Continuous Drain Current (ID) :
- 46A
- Package / Case :
- TO-247-3 Variant
- Fall Time (Typ) :
- 3 ns
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 500V
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 520W Tc
- Current Rating :
- 46A
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 11 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 26 Weeks
- Terminal Finish :
- TIN SILVER COPPER
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Number of Pins :
- 3
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 1997
- Rise Time :
- 15ns
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 23A, 10V
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4360pF @ 25V
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Datasheets
- APT5010B2FLLG
N-Channel Tube 100m Ω @ 23A, 10V ±30V 4360pF @ 25V 95nC @ 10V TO-247-3 Variant
APT5010B2FLLG Overview
A device's maximum input capacitance is 4360pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 46A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT5010B2FLLG Features
a continuous drain current (ID) of 46A
the turn-off delay time is 25 ns
APT5010B2FLLG Applications
There are a lot of Microsemi Corporation
APT5010B2FLLG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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