APT5010B2FLLG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

100m Ω @ 23A, 10V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3 Variant

Vgs (Max) :

±30V

Voltage - Rated DC :

500V

Lifecycle Status :

IN PRODUCTION (Last Updated: 4 weeks ago)

Turn-Off Delay Time :

25 ns

Power Dissipation-Max :

520W Tc

Factory Lead Time :

26 Weeks

Turn On Delay Time :

11 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

46A

Series :

POWER MOS 7®

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Pbfree Code :

yes

Power Dissipation :

520W

Terminal Finish :

TIN SILVER COPPER

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Terminations :

3

Radiation Hardening :

No

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4360pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Published :

1997

Transistor Element Material :

SILICON

Fall Time (Typ) :

3 ns

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Rise Time :

15ns

FET Type :

N-Channel

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Continuous Drain Current (ID) :

46A