APT5010JVRU2
- Mfr.Part #
- APT5010JVRU2
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A SOT227
- Stock
- 45,922
- In Stock :
- 45,922
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 44A
- Terminal Position :
- UPPER
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 18 ns
- Terminal Form :
- UNSPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 16ns
- Number of Channels :
- 1
- Weight :
- 30.000004g
- Mount :
- Chassis Mount, Screw
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Case Connection :
- Isolated
- Power Dissipation :
- 450W
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Length :
- 38.2mm
- Height :
- 9.6mm
- Gate Charge (Qg) (Max) @ Vgs :
- 312nC @ 10V
- Drain to Source Breakdown Voltage :
- 500V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Fall Time (Typ) :
- 5 ns
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Pins :
- 4
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 22A, 10V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 4
- Published :
- 2004
- Mounting Type :
- Chassis Mount
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Elements :
- 1
- Power Dissipation-Max :
- 450W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 7410pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 25.4mm
- Turn-Off Delay Time :
- 54 ns
- Factory Lead Time :
- 16 Weeks
- Datasheets
- APT5010JVRU2

N-Channel Bulk 100m Ω @ 22A, 10V ±30V 7410pF @ 25V 312nC @ 10V SOT-227-4, miniBLOC
APT5010JVRU2 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7410pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 54 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
APT5010JVRU2 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 54 ns
APT5010JVRU2 Applications
There are a lot of Microsemi Corporation
APT5010JVRU2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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