APT50GS60BRDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Vce(on) (Max) @ Vge, Ic :

3.15V @ 15V, 50A

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

93A

Current - Collector Pulsed (Icm) :

195A

Switching Energy :

755μJ (off)

Gate Charge :

235nC

Collector Emitter Voltage (VCEO) :

600V

Packaging :

Tube

Current - Collector (Ic) (Max) :

93A

Element Configuration :

Single

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

IGBT Type :

NPT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

16ns/225ns

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Test Condition :

400V, 50A, 4.7Ohm, 15V

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

415W

Supplier Device Package :

TO-247

Input Type :

Standard

Factory Lead Time :

22 Weeks

Power - Max :

415W

Voltage - Collector Emitter Breakdown (Max) :

600V