APT50GF120LRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Turn On Time :

106 ns

Current Rating :

156A

IGBT Type :

NPT

Switching Energy :

3.6mJ (on), 2.64mJ (off)

Collector Emitter Breakdown Voltage :

1.2kV

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

6.5V

Package / Case :

TO-264-3, TO-264AA

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge :

340nC

Pbfree Code :

yes

Radiation Hardening :

No

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

520 ns

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 50A

Current - Collector Pulsed (Icm) :

150A

Test Condition :

800V, 50A, 1 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Voltage - Rated DC :

1.2kV

Max Collector Current :

135A

Number of Elements :

1

Element Configuration :

Single

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

1.2kV

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

24 Weeks

Published :

2001

JESD-609 Code :

e1

Max Power Dissipation :

781W

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Terminal Finish :

TIN SILVER COPPER

Input Type :

Standard

Pin Count :

3

Td (on/off) @ 25°C :

25ns/260ns

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Gate-Emitter Voltage-Max :

30V

Power - Max :

781W