2SD2695,T6F(M
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- Mfr.Part #
- 2SD2695,T6F(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TO92MOD
- Stock
- 26,549
- In Stock ：
- 26,549
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Published :
- 2009
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 2V
- Current - Collector (Ic) (Max) :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Power - Max :
- 900mW
- Datasheets
- 2SD2695,T6F(M
NPN 150°C TJ 10μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SD2695,T6F(M Overview
In this device, the DC current gain is 2000 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1mA, 1A.The device exhibits a collector-emitter breakdown at 60V.
2SD2695,T6F(M Features
the DC current gain for this device is 2000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
2SD2695,T6F(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SD2695,T6F(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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