2PB710ASL,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

170 @ 150mA 10V

Mount :

Surface Mount

Gain Bandwidth Product :

140MHz

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

Frequency :

140MHz

Transistor Application :

SWITCHING

Terminal Position :

Dual

Polarity/Channel Type :

PNP

Transition Frequency :

140MHz

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

hFE Min :

40

Contact Plating :

Tin

Max Collector Current :

500mA

Number of Terminations :

3

Power Dissipation :

250mW

Number of Pins :

3

Number of Elements :

1

Current - Collector Cutoff (Max) :

10nA ICBO

Transistor Type :

PNP

Series :

Automotive, AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

150°C TJ

Base Part Number :

2PB710A

JESD-609 Code :

e3

Published :

2008

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

ECCN Code :

EAR99

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

60V