2PB709ART,215
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- Mfr.Part #
- 2PB709ART,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 323,266
- In Stock ：
- 323,266
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 250mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Frequency :
- 70MHz
- Number of Pins :
- 2
- Published :
- 2007
- Power Dissipation :
- 250mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transition Frequency :
- 70MHz
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 45V
- ECCN Code :
- EAR99
- Base Part Number :
- 2PB709A
- Gain Bandwidth Product :
- 70MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PDSO-G3
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2PB709ART,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ART,215 Overview
In this device, the DC current gain is 210 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PB709ART,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ART,215 Applications
There are a lot of Nexperia USA Inc.
2PB709ART,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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