2PB709ART,215
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- Mfr.Part #
- 2PB709ART,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 323,266
- In Stock ：
- 323,266
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transition Frequency :
- 70MHz
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2PB709A
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-G3
- Number of Pins :
- 2
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Frequency :
- 70MHz
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 70MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Power Dissipation :
- 250mW
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 250mW
- Transistor Application :
- SWITCHING
- Datasheets
- 2PB709ART,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ART,215 Overview
In this device, the DC current gain is 210 @ 2mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2PB709ART,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ART,215 Applications
There are a lot of Nexperia USA Inc.
2PB709ART,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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