2PB709ASL,235
- Mfr.Part #
- 2PB709ASL,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT883
- Stock
- 7,459
- In Stock :
- 7,459
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 250mW
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2008
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Power - Max :
- 250mW
- Terminal Position :
- Dual
- Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2PB709A
- Frequency - Transition :
- 80MHz
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 500mV
- Transition Frequency :
- 80MHz
- Collector Base Voltage (VCBO) :
- 45V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Contact Plating :
- Tin
- Datasheets
- 2PB709ASL,235
2PB709ASL,235 Documents

PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ASL,235 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
2PB709ASL,235 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
2PB709ASL,235 Applications
There are a lot of Nexperia USA Inc.
2PB709ASL,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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