2PB709ASL,235
- Mfr.Part #
- 2PB709ASL,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT883
- Stock
- 7,459
- In Stock :
- 7,459
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Max Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency - Transition :
- 80MHz
- Terminal Position :
- Dual
- Transition Frequency :
- 80MHz
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Published :
- 2008
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Configuration :
- Single
- Pin Count :
- 3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 500mV
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Power - Max :
- 250mW
- Base Part Number :
- 2PB709A
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Collector Base Voltage (VCBO) :
- 45V
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Datasheets
- 2PB709ASL,235

PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ASL,235 Overview
In this device, the DC current gain is 290 @ 2mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.80MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
2PB709ASL,235 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
2PB709ASL,235 Applications
There are a lot of Nexperia USA Inc.
2PB709ASL,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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