2PB709ARW,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Frequency :

70MHz

Terminal Form :

Gull wing

Number of Elements :

1

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

45V

Polarity/Channel Type :

PNP

Radiation Hardening :

No

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

hFE Min :

210

Collector Emitter Breakdown Voltage :

45V

Current - Collector Cutoff (Max) :

10nA ICBO

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 100mA

Max Power Dissipation :

200mW

Collector Base Voltage (VCBO) :

45V

Element Configuration :

Single

Lead Free :

Lead Free

Transition Frequency :

70MHz

Base Part Number :

2PB709A

Transistor Element Material :

SILICON

Gain Bandwidth Product :

70MHz

Max Collector Current :

100mA

Mounting Type :

Surface Mount

Factory Lead Time :

4 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

SC-70, SOT-323

Terminal Position :

Dual

Published :

2009

Emitter Base Voltage (VEBO) :

6V

ECCN Code :

EAR99

Pin Count :

3

Number of Terminations :

3

Power Dissipation :

200mW

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING