2PB709ARW,115
- Mfr.Part #
- 2PB709ARW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT323
- Stock
- 10,925
- In Stock :
- 10,925
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Transition Frequency :
- 70MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 70MHz
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 210
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 70MHz
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Max Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Base Part Number :
- 2PB709A
- Element Configuration :
- Single
- Pin Count :
- 3
- Published :
- 2009
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Datasheets
- 2PB709ARW,115

PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ARW,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 100mA volts can be achieved.
2PB709ARW,115 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ARW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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