2PB709ARL,215
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- Mfr.Part #
- 2PB709ARL,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT-23
- Stock
- 203,753
- In Stock ：
- 203,753
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Series :
- Automotive, AEC-Q101
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 70MHz
- Contact Plating :
- Tin
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Frequency :
- 70MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- 2PB709A
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 70MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 100mA
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Datasheets
- 2PB709ARL,215
2PB709ARL,215 Documents
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ARL,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2PB709ARL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709ARL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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