2PB709ARL,215
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- Mfr.Part #
- 2PB709ARL,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT-23
- Stock
- 203,753
- In Stock ：
- 203,753
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Mount :
- Surface Mount
- Frequency :
- 70MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Base Part Number :
- 2PB709A
- Gain Bandwidth Product :
- 70MHz
- Transistor Type :
- PNP
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 45V
- Power Dissipation :
- 250mW
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- ECCN Code :
- EAR99
- Transition Frequency :
- 70MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2008
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Datasheets
- 2PB709ARL,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ARL,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2PB709ARL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709ARL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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