2PB709ARW,115
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- Mfr.Part #
- 2PB709ARW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PB709ARW - SMALL S
- Stock
- 18,055
- In Stock ：
- 18,055
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Base Part Number :
- 2PB709A
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Terminal Form :
- Gull wing
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Gain Bandwidth Product :
- 70MHz
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Number of Elements :
- 1
- hFE Min :
- 210
- Power Dissipation :
- 200mW
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Package / Case :
- SC-70, SOT-323
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 70MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transition Frequency :
- 70MHz
- Contact Plating :
- Tin
- Datasheets
- 2PB709ARW,115
2PB709ARW,115 Documents
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ARW,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 100mA volts can be achieved.
2PB709ARW,115 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ARW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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