2PB709ARW,115
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- Mfr.Part #
- 2PB709ARW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PB709ARW - SMALL S
- Stock
- 18,055
- In Stock ：
- 18,055
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2009
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Number of Elements :
- 1
- hFE Min :
- 210
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Radiation Hardening :
- No
- Base Part Number :
- 2PB709A
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 70MHz
- Gain Bandwidth Product :
- 70MHz
- Frequency :
- 70MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Transistor Application :
- SWITCHING
- Datasheets
- 2PB709ARW,115
2PB709ARW,115 Documents
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ARW,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 100mA volts can be achieved.
2PB709ARW,115 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ARW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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