2PB709ARW,115
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- Mfr.Part #
- 2PB709ARW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PB709ARW - SMALL S
- Stock
- 18,055
- In Stock ：
- 18,055
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Base Part Number :
- 2PB709A
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 70MHz
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 210
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Max Power Dissipation :
- 200mW
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 70MHz
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Transition Frequency :
- 70MHz
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Position :
- Dual
- Datasheets
- 2PB709ARW,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ARW,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 210 @ 2mA 10V.When VCE saturation is 500mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 100mA volts can be achieved.
2PB709ARW,115 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ARW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ARW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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