2PB709AR,115
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- Mfr.Part #
- 2PB709AR,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SMT3
- Stock
- 48,160
- In Stock ：
- 48,160
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Current - Collector (Ic) (Max) :
- 100mA
- Supplier Device Package :
- SMT3; MPAK
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 70MHz
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Power - Max :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2PB709AR,115
PNP 150°C TJ 10nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709AR,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 210 @ 2mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 10mA, 100mA.The product comes in the supplier device package of SMT3; MPAK.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
2PB709AR,115 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of SMT3; MPAK
2PB709AR,115 Applications
There are a lot of Rochester Electronics, LLC
2PB709AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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