2PB709ASL,215
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- Mfr.Part #
- 2PB709ASL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 326,820
- In Stock ：
- 326,820
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Base Part Number :
- 2PB709A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 70MHz
- Max Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Frequency - Transition :
- 80MHz
- Number of Pins :
- 3
- Transition Frequency :
- 80MHz
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Frequency :
- 70MHz
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Datasheets
- 2PB709ASL,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ASL,215 Overview
DC current gain in this device equals 290 @ 2mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 80MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
2PB709ASL,215 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
2PB709ASL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709ASL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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