2PB709ASL,215
- Mfr.Part #
- 2PB709ASL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A TO236AB
- Stock
- 326,820
- In Stock :
- 326,820
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- 2PB709A
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 70MHz
- Power Dissipation :
- 250mW
- Max Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Published :
- 2008
- Transition Frequency :
- 80MHz
- Frequency - Transition :
- 80MHz
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 70MHz
- Max Collector Current :
- 100mA
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Terminal Position :
- Dual
- Datasheets
- 2PB709ASL,215
2PB709ASL,215 Documents

PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ASL,215 Overview
DC current gain in this device equals 290 @ 2mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 80MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
2PB709ASL,215 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 80MHz
2PB709ASL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709ASL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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