2PB709ART,235
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- Mfr.Part #
- 2PB709ART,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT23-3
- Stock
- 4,003
- In Stock ：
- 4,003
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Transition Frequency :
- 70MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 250mW
- Published :
- 2007
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Frequency :
- 70MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 70MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Base Part Number :
- 2PB709A
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 10V
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 45V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Datasheets
- 2PB709ART,235
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709ART,235 Overview
DC current gain in this device equals 120 @ 2mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 70MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
2PB709ART,235 Features
the DC current gain for this device is 120 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
2PB709ART,235 Applications
There are a lot of Nexperia USA Inc.
2PB709ART,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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