2PB710AR,115
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- Mfr.Part #
- 2PB710AR,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A SMT3
- Stock
- 37,115
- In Stock ：
- 37,115
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 150mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- VCEsat-Max :
- 0.6 V
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 120MHz
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Pin Count :
- 3
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector-Base Capacitance-Max :
- 15pF
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Terminal Finish :
- Tin
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Base Part Number :
- 2PB710A
- Power - Max :
- 250mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.75
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 120MHz
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2PB710AR,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB710AR,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.The part has a transition frequency of 120MHz.Device displays Collector Emitter Breakdown (50V maximal voltage).
2PB710AR,115 Features
the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 120MHz
2PB710AR,115 Applications
There are a lot of NXP USA Inc.
2PB710AR,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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