2PB709BSL,215
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- Mfr.Part #
- 2PB709BSL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.2A TO236AB
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Configuration :
- Single
- Transition Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 200MHz
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 200mA
- hFE Min :
- 210
- Current - Collector (Ic) (Max) :
- 200mA
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 250mW
- Power Dissipation :
- 250mW
- Datasheets
- 2PB709BSL,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709BSL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 200mA volts.
2PB709BSL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2PB709BSL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709BSL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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