2PB709BSL,215
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- Mfr.Part #
- 2PB709BSL,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.2A TO236AB
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Configuration :
- Single
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 210
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 200mA
- Polarity/Channel Type :
- PNP
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Frequency :
- 200MHz
- Transition Frequency :
- 200MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 4 Weeks
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Max Collector Current :
- 200mA
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 250mW
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Datasheets
- 2PB709BSL,215
2PB709BSL,215 Documents
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709BSL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 200mA volts.
2PB709BSL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2PB709BSL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709BSL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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