2PB709BSL,215
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- Mfr.Part #
- 2PB709BSL,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA 2PB709 - SMALL SIGNAL B
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Current - Collector (Ic) (Max) :
- 200mA
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Configuration :
- Single
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 250mW
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 200MHz
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Frequency :
- 200MHz
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Surface Mount
- hFE Min :
- 210
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Datasheets
- 2PB709BSL,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709BSL,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 210 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 200MHz.During maximum operation, collector current can be as low as 200mA volts.
2PB709BSL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2PB709BSL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709BSL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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