2PB709BRL,215
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- Mfr.Part #
- 2PB709BRL,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA 2PB709 - SMALL SIGNAL B
- Stock
- 31,685
- In Stock ：
- 31,685
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 210 @ 2mA 10V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Surface Mount
- Published :
- 2010
- hFE Min :
- 210
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 200mA
- Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 200MHz
- Transistor Type :
- PNP
- Transition Frequency :
- 200MHz
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 250mW
- Pin Count :
- 3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Datasheets
- 2PB709BRL,215
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2PB709BRL,215 Overview
This device has a DC current gain of 210 @ 2mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 200mA volts.
2PB709BRL,215 Features
the DC current gain for this device is 210 @ 2mA 10V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2PB709BRL,215 Applications
There are a lot of Nexperia USA Inc.
2PB709BRL,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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