2PB709ASW,115
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- Mfr.Part #
- 2PB709ASW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA 2PB709ASW - SMALL S
- Stock
- 22,109
- In Stock ：
- 22,109
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Pin Count :
- 3
- Published :
- 2009
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Pins :
- 3
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 500mV
- hFE Min :
- 210
- Current - Collector (Ic) (Max) :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 80MHz
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -45V
- Base Part Number :
- 2PB709A
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 80MHz
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 2mA 10V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 100mA
- Package / Case :
- SC-70, SOT-323
- Datasheets
- 2PB709ASW,115
PNP 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2PB709ASW,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 290 @ 2mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 100mA volts.
2PB709ASW,115 Features
the DC current gain for this device is 290 @ 2mA 10V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -6V
a transition frequency of 80MHz
2PB709ASW,115 Applications
There are a lot of Nexperia USA Inc.
2PB709ASW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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