ZXTDE4M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

3.5A 2.5A

JESD-609 Code :

e3

Max Breakdown Voltage :

70V

Max Power Dissipation :

1W

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

10

hFE Min :

200

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Length :

3mm

Number of Elements :

2

JESD-30 Code :

R-PQFP-F10

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V / 40 @ 1.5A 5V

Qualification Status :

Not Qualified

Base Part Number :

ZXTDE4M832

Gain Bandwidth Product :

180MHz

Transition Frequency :

160MHz

Terminal Position :

QUAD

Collector Emitter Voltage (VCEO) :

325mV

Number of Pins :

832

Voltage - Collector Emitter Breakdown (Max) :

80V 70V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Continuous Collector Current :

-2.5A

Terminal Finish :

Matte Tin (Sn)

Height :

1mm

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Element Configuration :

Dual

Transistor Type :

NPN, PNP

Collector Emitter Breakdown Voltage :

70V

Mount :

Surface Mount

Package / Case :

8-VDFN Exposed Pad

Vce Saturation (Max) @ Ib, Ic :

325mV @ 300mA, 3.5A / 260mV @ 200mA, 1.5A

Collector Base Voltage (VCBO) :

70V

Emitter Base Voltage (VEBO) :

7.5V

Current - Collector Cutoff (Max) :

25nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

2.5A

Pin Count :

10

Current Rating :

3.5A

Polarity :

NPN, PNP

Frequency - Transition :

160MHz 180MHz

Terminal Form :

Flat

Width :

2mm

RoHS Status :

ROHS3 Compliant