ZXTD618MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lead Free :

Lead Free

Factory Lead Time :

16 Weeks

Collector Emitter Saturation Voltage :

8mV

Radiation Hardening :

No

Published :

2011

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Max Power Dissipation :

1.7W

JESD-609 Code :

e4

Polarity :

NPN

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Element Configuration :

Dual

Number of Pins :

8

Frequency - Transition :

100MHz

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 125mA, 4.5A

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

7V

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Collector Base Voltage (VCBO) :

40V

Max Collector Current :

4.5A

Gain Bandwidth Product :

140MHz

Collector Emitter Voltage (VCEO) :

20V

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Package / Case :

8-VDFN Exposed Pad

Max Breakdown Voltage :

20V

Collector Emitter Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

100nA

Transistor Type :

2 NPN (Dual)

Continuous Collector Current :

4.5A

Current - Collector (Ic) (Max) :

5A

Number of Terminations :

8

Pbfree Code :

yes

Pin Count :

8

Transition Frequency :

140MHz