ZXTD1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Flat

Length :

3mm

Max Breakdown Voltage :

12V

Base Part Number :

ZXTD1M832

Width :

2mm

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

12V

Height :

1mm

Polarity :

PNP

Mount :

Surface Mount

Voltage - Rated DC :

-12V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

3W

Current - Collector Cutoff (Max) :

25nA

Transistor Application :

SWITCHING

Element Configuration :

Dual

Max Power Dissipation :

1.7W

Power - Max :

1.7W

ECCN Code :

EAR99

Transition Frequency :

110MHz

Transistor Type :

2 PNP (Dual)

Peak Reflow Temperature (Cel) :

260

Frequency :

110MHz

Current Rating :

-4A

Vce Saturation (Max) @ Ib, Ic :

300mV @ 150mA, 4A

Collector Emitter Saturation Voltage :

-240mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2.5A 2V

Case Connection :

COLLECTOR

Number of Terminations :

10

Gain Bandwidth Product :

110MHz

JESD-30 Code :

R-PQFP-F10

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Pins :

832

Published :

2006

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Max Collector Current :

4A

Emitter Base Voltage (VEBO) :

7.5V

RoHS Status :

ROHS3 Compliant

Package / Case :

8-VDFN Exposed Pad

Lead Free :

Lead Free

Continuous Collector Current :

-4A

Number of Elements :

2

Pin Count :

10

Collector Emitter Voltage (VCEO) :

300mV

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

-20V

Terminal Position :

QUAD