ZXTD1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

3W

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-12V

JESD-30 Code :

R-PQFP-F10

Max Power Dissipation :

1.7W

Height :

1mm

Base Part Number :

ZXTD1M832

Gain Bandwidth Product :

110MHz

Number of Terminations :

10

Collector Base Voltage (VCBO) :

-20V

Length :

3mm

Power - Max :

1.7W

Terminal Position :

QUAD

JESD-609 Code :

e3

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Frequency :

110MHz

Emitter Base Voltage (VEBO) :

7.5V

Terminal Form :

Flat

Mount :

Surface Mount

Element Configuration :

Dual

Max Collector Current :

4A

Max Breakdown Voltage :

12V

Transistor Type :

2 PNP (Dual)

Case Connection :

COLLECTOR

Transition Frequency :

110MHz

ECCN Code :

EAR99

Package / Case :

8-VDFN Exposed Pad

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2.5A 2V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

-240mV

Pin Count :

10

Vce Saturation (Max) @ Ib, Ic :

300mV @ 150mA, 4A

Number of Pins :

832

Operating Temperature :

-55°C~150°C TJ

Continuous Collector Current :

-4A

Number of Elements :

2

Transistor Element Material :

SILICON

Current Rating :

-4A

Collector Emitter Breakdown Voltage :

12V

Published :

2006

Collector Emitter Voltage (VCEO) :

300mV

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Polarity :

PNP

Width :

2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

25nA