ZXTD617MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

15V

Element Configuration :

Dual

Transistor Type :

2 NPN (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Max Collector Current :

4.5A

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

5A

JESD-609 Code :

e4

Frequency - Transition :

80MHz

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

15V

Number of Terminations :

8

Number of Elements :

2

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Collector Base Voltage (VCBO) :

40V

Gain Bandwidth Product :

120MHz

Pbfree Code :

yes

Mount :

Surface Mount

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA

Number of Pins :

8

Collector Emitter Breakdown Voltage :

15V

Emitter Base Voltage (VEBO) :

7V

Package / Case :

8-VDFN Exposed Pad

Published :

2010

Additional Feature :

High Reliability

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Transition Frequency :

120MHz

Polarity :

NPN

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

940mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

310mV @ 50mA, 4.5A

Max Power Dissipation :

1.7W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)