ZXTD617MCTA
- Mfr.Part #
- ZXTD617MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS 2NPN 15V 4.5A 8DFN
- Stock
- 110,734
- In Stock :
- 110,734
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 15V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 15V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 1.7W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- 2 NPN (Dual)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Additional Feature :
- High Reliability
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Saturation Voltage :
- 940mV
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- REACH SVHC :
- No SVHC
- Element Configuration :
- Dual
- Mount :
- Surface Mount
- Polarity :
- NPN
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 8
- Published :
- 2010
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 50mA, 4.5A
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 80MHz
- Factory Lead Time :
- 16 Weeks
- Gain Bandwidth Product :
- 120MHz
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 4.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 15V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e4
- Package / Case :
- 8-VDFN Exposed Pad
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 5A
- Datasheets
- ZXTD617MCTA

ZXTD617MCTA datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Diodes Incorporated stock available at
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