ZXTD09N50DE6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Collector Base Voltage (VCBO) :

50V

Radiation Hardening :

No

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Mount :

Surface Mount

Max Collector Current :

1A

Polarity :

NPN

Power - Max :

1.1W

Power Dissipation :

1.7W

Number of Pins :

6

Factory Lead Time :

15 Weeks

Frequency :

215MHz

Collector Emitter Breakdown Voltage :

50V

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

10nA

Package / Case :

SOT-23-6

Transistor Application :

SWITCHING

Element Configuration :

Dual

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

215MHz

Emitter Base Voltage (VEBO) :

5V

Continuous Collector Current :

1A

Max Power Dissipation :

1.7W

Current Rating :

2A

Transistor Element Material :

SILICON

Gain Bandwidth Product :

215MHz

Packaging :

Tape and Reel (TR)

Height :

1.3mm

JESD-609 Code :

e3

Terminal Form :

Gull wing

Base Part Number :

ZXTD09N50D

Collector Emitter Saturation Voltage :

160mV

Weight :

14.996898mg

Length :

3.1mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

2 NPN (Dual)

ECCN Code :

EAR99

Pin Count :

6

Voltage - Rated DC :

50V

Number of Terminations :

6

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Width :

1.8mm

Vce Saturation (Max) @ Ib, Ic :

270mV @ 50mA, 1A

Time@Peak Reflow Temperature-Max (s) :

40