ZXTD09N50DE6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

SOT-23-6

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Power - Max :

1.1W

Power Dissipation :

1.7W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Max Breakdown Voltage :

50V

Base Part Number :

ZXTD09N50D

Max Power Dissipation :

1.7W

Collector Base Voltage (VCBO) :

50V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

15 Weeks

Transistor Element Material :

SILICON

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Width :

1.8mm

Max Collector Current :

1A

Polarity :

NPN

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Length :

3.1mm

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

270mV @ 50mA, 1A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Frequency :

215MHz

Gain Bandwidth Product :

215MHz

Mount :

Surface Mount

Height :

1.3mm

Collector Emitter Voltage (VCEO) :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Pin Count :

6

Current Rating :

2A

Element Configuration :

Dual

ECCN Code :

EAR99

Published :

2011

Transistor Application :

SWITCHING

Weight :

14.996898mg

Transition Frequency :

215MHz

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

10nA

Continuous Collector Current :

1A

Collector Emitter Saturation Voltage :

160mV