ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

25nA

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Power - Max :

1.7W

Max Collector Current :

3.5A

Width :

2mm

Package / Case :

8-VDFN Exposed Pad

Max Breakdown Voltage :

20V

Gain Bandwidth Product :

180MHz

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

20V

Polarity :

PNP

Current Rating :

-3.5A

Number of Terminations :

10

Number of Pins :

832

Terminal Finish :

Matte Tin (Sn)

Pin Count :

10

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

300mV

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PQFP-F10

Base Part Number :

ZXTD2M832

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3W

Terminal Form :

Flat

JESD-609 Code :

e3

Published :

2006

Continuous Collector Current :

-3.5A

Emitter Base Voltage (VEBO) :

7.5V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-240mV

Collector Base Voltage (VCBO) :

-25V

Max Power Dissipation :

1.7W

Transition Frequency :

180MHz

Terminal Position :

QUAD

Mount :

Surface Mount

Height :

1mm

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-20V

Transistor Type :

2 PNP (Dual)

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Frequency :

180MHz

Length :

3mm