ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

3.5A

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

8-VDFN Exposed Pad

Terminal Form :

Flat

Collector Emitter Saturation Voltage :

-240mV

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Height :

1mm

JESD-30 Code :

R-PQFP-F10

Number of Pins :

832

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Number of Elements :

2

Number of Terminations :

10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

1.7W

Max Power Dissipation :

1.7W

Transistor Type :

2 PNP (Dual)

Pin Count :

10

Width :

2mm

Current - Collector Cutoff (Max) :

25nA

Length :

3mm

Max Breakdown Voltage :

20V

Power Dissipation :

3W

Terminal Position :

QUAD

Gain Bandwidth Product :

180MHz

Emitter Base Voltage (VEBO) :

7.5V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Transition Frequency :

180MHz

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Current Rating :

-3.5A

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Voltage - Rated DC :

-20V

Published :

2006

Base Part Number :

ZXTD2M832

Continuous Collector Current :

-3.5A

Collector Base Voltage (VCBO) :

-25V

Frequency :

180MHz

Qualification Status :

Not Qualified

Lead Free :

Lead Free

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Polarity :

PNP

Element Configuration :

Dual

Mounting Type :

Surface Mount