ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Width :

2mm

Power Dissipation :

3W

Collector Emitter Breakdown Voltage :

20V

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PQFP-F10

Gain Bandwidth Product :

180MHz

Qualification Status :

Not Qualified

Height :

1mm

Collector Emitter Saturation Voltage :

-240mV

Current Rating :

-3.5A

Number of Terminations :

10

Collector Emitter Voltage (VCEO) :

300mV

Element Configuration :

Dual

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Voltage - Rated DC :

-20V

Mount :

Surface Mount

Published :

2006

Max Power Dissipation :

1.7W

Length :

3mm

Terminal Position :

QUAD

Terminal Form :

Flat

Package / Case :

8-VDFN Exposed Pad

Current - Collector Cutoff (Max) :

25nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

-25V

Power - Max :

1.7W

Continuous Collector Current :

-3.5A

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Number of Pins :

832

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

ZXTD2M832

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Breakdown Voltage :

20V

Polarity :

PNP

Transition Frequency :

180MHz

RoHS Status :

ROHS3 Compliant

Frequency :

180MHz

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Emitter Base Voltage (VEBO) :

7.5V

Pin Count :

10

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Max Collector Current :

3.5A

Transistor Type :

2 PNP (Dual)