ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Element Configuration :

Dual

Pin Count :

10

Published :

2006

Max Collector Current :

3.5A

Max Power Dissipation :

1.7W

Voltage - Rated DC :

-20V

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

20V

Width :

2mm

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Power Dissipation :

3W

Frequency :

180MHz

Terminal Finish :

Matte Tin (Sn)

Continuous Collector Current :

-3.5A

Current - Collector Cutoff (Max) :

25nA

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Type :

2 PNP (Dual)

Collector Base Voltage (VCBO) :

-25V

Collector Emitter Saturation Voltage :

-240mV

Number of Pins :

832

Case Connection :

COLLECTOR

Number of Terminations :

10

Package / Case :

8-VDFN Exposed Pad

Transition Frequency :

180MHz

Height :

1mm

Packaging :

Cut Tape (CT)

Current Rating :

-3.5A

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

7.5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Gain Bandwidth Product :

180MHz

Collector Emitter Voltage (VCEO) :

300mV

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-30 Code :

R-PQFP-F10

Power - Max :

1.7W

Terminal Form :

Flat

Lead Free :

Lead Free

Number of Elements :

2

Polarity :

PNP

Base Part Number :

ZXTD2M832

Max Breakdown Voltage :

20V

Length :

3mm

Terminal Position :

QUAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3