ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

8-VDFN Exposed Pad

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Width :

2mm

Collector Emitter Breakdown Voltage :

20V

Height :

1mm

Power - Max :

1.7W

Lead Free :

Lead Free

Mount :

Surface Mount

Gain Bandwidth Product :

180MHz

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

300mV

Transistor Element Material :

SILICON

Pin Count :

10

Number of Pins :

832

Number of Terminations :

10

Power Dissipation :

3W

Terminal Finish :

Matte Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Number of Elements :

2

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.7W

JESD-30 Code :

R-PQFP-F10

Length :

3mm

Collector Base Voltage (VCBO) :

-25V

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Base Part Number :

ZXTD2M832

Terminal Form :

Flat

Transition Frequency :

180MHz

Qualification Status :

Not Qualified

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Continuous Collector Current :

-3.5A

Collector Emitter Saturation Voltage :

-240mV

Terminal Position :

QUAD

Emitter Base Voltage (VEBO) :

7.5V

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

3.5A

Current Rating :

-3.5A

Max Breakdown Voltage :

20V

Frequency :

180MHz

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

25nA

Transistor Type :

2 PNP (Dual)

Voltage - Rated DC :

-20V