ZXTD2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

-3.5A

Package / Case :

8-VDFN Exposed Pad

Width :

2mm

JESD-609 Code :

e3

Max Collector Current :

3.5A

Voltage - Rated DC :

-20V

Transition Frequency :

180MHz

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

10

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

180MHz

Power Dissipation :

3W

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-240mV

Height :

1mm

Transistor Element Material :

SILICON

Mount :

Surface Mount

Max Power Dissipation :

1.7W

Number of Pins :

832

Pin Count :

10

Base Part Number :

ZXTD2M832

Packaging :

Cut Tape (CT)

Number of Elements :

2

Polarity :

PNP

JESD-30 Code :

R-PQFP-F10

Published :

2006

Collector Base Voltage (VCBO) :

-25V

Continuous Collector Current :

-3.5A

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

7.5V

Terminal Position :

QUAD

Current - Collector Cutoff (Max) :

25nA

Frequency :

180MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 2A 2V

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

20V

Lead Free :

Lead Free

Length :

3mm

Transistor Type :

2 PNP (Dual)

Collector Emitter Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Power - Max :

1.7W

Terminal Form :

Flat

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

300mV

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Case Connection :

COLLECTOR