ZXTD3M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

ZXTD3M832

Collector Emitter Breakdown Voltage :

40V

Power - Max :

1.7W

Current - Collector Cutoff (Max) :

25nA

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Form :

Flat

Max Power Dissipation :

1.7W

Qualification Status :

Not Qualified

JESD-30 Code :

R-PQFP-F10

Transistor Element Material :

SILICON

Package / Case :

8-VDFN Exposed Pad

Number of Elements :

2

Max Collector Current :

3A

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-3A

Transition Frequency :

190MHz

Frequency - Transition :

190MHz

Terminal Position :

QUAD

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Configuration :

SEPARATE, 2 ELEMENTS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

10

Voltage - Rated DC :

-40V

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

370mV @ 250mA, 2.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 1.5A 2V

Mount :

Surface Mount

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Transistor Type :

2 PNP (Dual)

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

370mV

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)