ZXTD3M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power - Max :

1.7W

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-40V

Frequency - Transition :

190MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

25nA

Terminal Finish :

Matte Tin (Sn)

Max Power Dissipation :

1.7W

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 1.5A 2V

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Package / Case :

8-VDFN Exposed Pad

Mount :

Surface Mount

Base Part Number :

ZXTD3M832

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

40V

Max Collector Current :

3A

Lead Free :

Lead Free

Qualification Status :

Not Qualified

Terminal Position :

QUAD

Current Rating :

-3A

Transition Frequency :

190MHz

Configuration :

SEPARATE, 2 ELEMENTS

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

370mV

JESD-30 Code :

R-PQFP-F10

Pin Count :

10

Number of Terminations :

10

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

370mV @ 250mA, 2.5A