ZXTD3M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transition Frequency :

190MHz

Max Power Dissipation :

1.7W

Frequency - Transition :

190MHz

Transistor Type :

2 PNP (Dual)

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

370mV @ 250mA, 2.5A

Current - Collector Cutoff (Max) :

25nA

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Pin Count :

10

Terminal Position :

QUAD

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

40V

Current Rating :

-3A

Number of Terminations :

10

Base Part Number :

ZXTD3M832

Configuration :

SEPARATE, 2 ELEMENTS

Power - Max :

1.7W

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

370mV

Qualification Status :

Not Qualified

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-40V

Package / Case :

8-VDFN Exposed Pad

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 1.5A 2V

JESD-30 Code :

R-PQFP-F10

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

3A

Case Connection :

COLLECTOR

Max Breakdown Voltage :

40V