ZXTD619MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency :

165MHz

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Transistor Type :

2 NPN (Dual)

Case Connection :

COLLECTOR

Max Power Dissipation :

2.45W

Max Collector Current :

4A

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Package / Case :

8-VDFN Exposed Pad

Factory Lead Time :

16 Weeks

Collector Emitter Saturation Voltage :

270mV

JESD-609 Code :

e4

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

100V

Polarity :

NPN

REACH SVHC :

No SVHC

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Pbfree Code :

yes

Number of Pins :

8

Current - Collector Cutoff (Max) :

100nA

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

165MHz

Frequency - Transition :

100MHz

Emitter Base Voltage (VEBO) :

7V

Power Dissipation :

2.45W

Transition Frequency :

165MHz

Element Configuration :

Dual

ECCN Code :

EAR99

Number of Elements :

2

Power - Max :

1.7W

Transistor Application :

SWITCHING