ZXTD619MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency - Transition :

100MHz

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Pin Count :

8

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A

Power - Max :

1.7W

JESD-609 Code :

e4

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Radiation Hardening :

No

Transition Frequency :

165MHz

Number of Elements :

2

Package / Case :

8-VDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

270mV

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Polarity :

NPN

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

8

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

2.45W

Mount :

Surface Mount

Number of Pins :

8

Max Collector Current :

4A

Power Dissipation :

2.45W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Type :

2 NPN (Dual)

Gain Bandwidth Product :

165MHz

REACH SVHC :

No SVHC

Published :

2011

Emitter Base Voltage (VEBO) :

7V

Peak Reflow Temperature (Cel) :

260

Frequency :

165MHz