ZXTDB2M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mount :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

8-VDFN Exposed Pad

Element Configuration :

Dual

Current Rating :

4.5A

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

NPN, PNP

Pin Count :

10

Number of Pins :

832

Transition Frequency :

140MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Height :

1mm

Frequency - Transition :

140MHz 180MHz

Max Power Dissipation :

1.7W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A 2V / 150 @ 2A 2V

JESD-609 Code :

e3

Frequency :

140MHz

Length :

3mm

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Base Part Number :

ZXTDB2M832

ECCN Code :

EAR99

Published :

2002

Emitter Base Voltage (VEBO) :

7.5V

Terminal Position :

QUAD

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

25nA

Number of Terminations :

10

Polarity :

NPN, PNP

Gain Bandwidth Product :

180MHz

Max Breakdown Voltage :

20V

Collector Emitter Breakdown Voltage :

20V

Power Dissipation :

3W

Max Collector Current :

3.5A

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

25V

Width :

2mm

Vce Saturation (Max) @ Ib, Ic :

270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A

Current - Collector (Ic) (Max) :

4.5A 3.5A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

20V

Number of Elements :

2

Terminal Form :

Flat

JESD-30 Code :

R-PQFP-F10

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified