ZXTDA1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Continuous Collector Current :

-4A

Terminal Form :

Flat

ECCN Code :

EAR99

Package / Case :

8-VDFN Exposed Pad

JESD-609 Code :

e3

Base Part Number :

ZXTDA1M832

Collector Emitter Saturation Voltage :

240mV

Gain Bandwidth Product :

120MHz

Length :

3mm

Current - Collector (Ic) (Max) :

4.5A 4A

Number of Terminations :

10

Mounting Type :

Surface Mount

Polarity :

NPN, PNP

Terminal Position :

QUAD

Collector Base Voltage (VCBO) :

20V

Frequency - Transition :

120MHz 110MHz

Collector Emitter Breakdown Voltage :

12V

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 3A 2V / 180 @ 2.5A 2V

Transistor Type :

NPN, PNP

Current - Collector Cutoff (Max) :

25nA

Mount :

Surface Mount

Qualification Status :

Not Qualified

Max Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1W

Element Configuration :

Dual

Voltage - Collector Emitter Breakdown (Max) :

15V 12V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Max Collector Current :

4A

JESD-30 Code :

R-PQFP-F10

Number of Pins :

832

Transition Frequency :

120MHz

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A

Collector Emitter Voltage (VCEO) :

280mV

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Frequency :

120MHz

Pin Count :

10

Case Connection :

COLLECTOR

Power Dissipation :

3W

Width :

2mm

Height :

1mm

Published :

2002

Emitter Base Voltage (VEBO) :

7.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)