ZXTD718MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Power - Max :

1.7W

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

Package / Case :

8-VDFN Exposed Pad

Emitter Base Voltage (VEBO) :

-7V

Current - Collector Cutoff (Max) :

100nA

Pin Count :

8

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

20V

Max Collector Current :

3.5A

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Transistor Element Material :

SILICON

Power Dissipation :

2.45W

Radiation Hardening :

No

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gain Bandwidth Product :

180MHz

Number of Pins :

8

Max Breakdown Voltage :

20V

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Published :

2011

Transition Frequency :

180MHz

Max Power Dissipation :

2.45W

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

20V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Transistor Type :

2 PNP (Dual)

Collector Emitter Saturation Voltage :

-19mV

Number of Elements :

2

Collector Base Voltage (VCBO) :

25V

JESD-609 Code :

e4

ECCN Code :

EAR99

Frequency - Transition :

150MHz

Frequency :

180MHz

Mount :

Surface Mount