ZXTD718MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

-19mV

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

20V

Emitter Base Voltage (VEBO) :

-7V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2.45W

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

JESD-609 Code :

e4

Collector Base Voltage (VCBO) :

25V

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Frequency :

180MHz

Package / Case :

8-VDFN Exposed Pad

Peak Reflow Temperature (Cel) :

260

Power - Max :

1.7W

Transition Frequency :

180MHz

Number of Elements :

2

Transistor Application :

SWITCHING

Max Power Dissipation :

2.45W

Number of Pins :

8

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Collector Emitter Voltage (VCEO) :

20V

Max Breakdown Voltage :

20V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Pin Count :

8

Frequency - Transition :

150MHz

Gain Bandwidth Product :

180MHz

Max Collector Current :

3.5A

Current - Collector Cutoff (Max) :

100nA

Published :

2011

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 PNP (Dual)

Radiation Hardening :

No

Element Configuration :

Dual