TPS1120DR

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

15V

JESD-609 Code :

e4

Lead Free :

Lead Free

Factory Lead Time :

6 Weeks

Power Dissipation :

840mW

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Turn-Off Delay Time :

13 ns

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

840mW

Packaging :

Cut Tape (CT)

Number of Elements :

2

Voltage - Rated DC :

-15V

Continuous Drain Current (ID) :

1.17A

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Number of Pins :

8

Current Rating :

-1.17A

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

2V

Contact Plating :

Gold

Rise Time :

10ns

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.4Ohm

Radiation Hardening :

No

Mount :

Surface Mount

Length :

4.9mm

Turn On Delay Time :

4.5 ns

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Thickness :

1.58mm

Transistor Application :

SWITCHING

Pin Count :

8

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Width :

3.91mm

Fall Time (Typ) :

10 ns

Height :

1.75mm

Base Part Number :

TPS1120

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant