TPS1120DR

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

10ns

Gate to Source Voltage (Vgs) :

2V

Lead Free :

Lead Free

Pin Count :

8

Drain to Source Breakdown Voltage :

15V

Voltage - Rated DC :

-15V

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Turn-Off Delay Time :

13 ns

Max Power Dissipation :

840mW

Number of Elements :

2

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

Turn On Delay Time :

4.5 ns

Factory Lead Time :

6 Weeks

FET Type :

2 P-Channel (Dual)

Radiation Hardening :

No

Thickness :

1.58mm

Power Dissipation :

840mW

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Height :

1.75mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.17A

RoHS Status :

ROHS3 Compliant

Width :

3.91mm

Length :

4.9mm

Number of Pins :

8

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Form :

Gull wing

Number of Terminations :

8

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.4Ohm

Base Part Number :

TPS1120

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Current Rating :

-1.17A

JESD-609 Code :

e4

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Contact Plating :

Gold

Transistor Element Material :

SILICON