TPS1120DR

Share

Or copy the link below:

Mfr.Part #
TPS1120DR
Manufacturer
Texas Instruments
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2P-CH 15V 1.17A 8-SOIC
Stock
164
In Stock :
164

Request A Quote(RFQ)

* Fullname:
* Company:
* E-Mail:
  Phone:
  Comment:
* Quantity:
Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Arrays
Turn-Off Delay Time :
13 ns
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time :
6 Weeks
Peak Reflow Temperature (Cel) :
260
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
8
Operating Temperature :
-40°C~150°C TJ
Rds On (Max) @ Id, Vgs :
180m Ω @ 1.5A, 10V
Rise Time :
10ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain-source On Resistance-Max :
0.4Ohm
FET Feature :
Logic Level Gate
Lead Free :
Lead Free
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-15V
Transistor Element Material :
SILICON
JESD-609 Code :
e4
Mount :
Surface Mount
Width :
3.91mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
8
Number of Elements :
2
Current Rating :
-1.17A
Length :
4.9mm
Power Dissipation :
840mW
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
15V
Radiation Hardening :
No
Packaging :
Cut Tape (CT)
Height :
1.75mm
Continuous Drain Current (ID) :
1.17A
Number of Terminations :
8
Contact Plating :
Gold
Terminal Form :
Gull wing
Max Power Dissipation :
840mW
Turn On Delay Time :
4.5 ns
Base Part Number :
TPS1120
FET Type :
2 P-Channel (Dual)
Vgs(th) (Max) @ Id :
1.5V @ 250µA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
5.45nC @ 10V
Additional Feature :
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
ECCN Code :
EAR99
Fall Time (Typ) :
10 ns
Thickness :
1.58mm
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
2V
Datasheets
TPS1120DR
Introducing Transistors - FETs, MOSFETs - Arrays Texas Instruments TPS1120DR from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-40°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Number of Terminations:8, Base Part Number:TPS1120, TPS1120DR pinout, TPS1120DR datasheet PDF, TPS1120DR amp .Beyond Transistors - FETs, MOSFETs - Arrays Texas Instruments TPS1120DR ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments TPS1120DR


TPS1120DR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at

Purchase

You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.

RFQ (Request for Quotations)

It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.

Payment Method

For your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.

IMPORTANT NOTICE

You may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.

Shipping Method

Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...

Shipping Cost

Shipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.

The basic freight (for package ≤0.5 KG ) depends on the time zones and countries

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.

Manufacturer related products

Catalog related products

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26
RFQ
BOM