TPS1100PWR

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

4.5 ns

Current Rating :

-1.27mA

Terminal Position :

Dual

Height :

1.2mm

Voltage - Rated DC :

-15V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

Number of Pins :

8

Number of Terminations :

8

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Vgs (Max) :

+2V, -15V

Drain to Source Breakdown Voltage :

-15V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

JESD-609 Code :

e4

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

504mW Ta

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1.27A Ta

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Base Part Number :

TPS1100

Width :

4.4mm

Continuous Drain Current (ID) :

1.27A

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drain-source On Resistance-Max :

0.4Ohm

Contact Plating :

Gold

Rise Time :

10ns

Thickness :

1mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

13 ns

Pbfree Code :

yes

Pin Count :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation :

504mW

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Elements :

1

FET Type :

P-Channel

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

2V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

15V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V