TPS1100PWR
- Mfr.Part #
- TPS1100PWR
- Manufacturer
- Texas Instruments
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 1.27A 8TSSOP
- Stock
- 797
- In Stock :
- 797
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 5.45nC @ 10V
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 4.5 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 504mW Ta
- Height :
- 1.2mm
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Contact Plating :
- Gold
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -40°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 1.27A Ta
- Length :
- 3mm
- Number of Terminations :
- 8
- Rise Time :
- 10ns
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 15V
- Width :
- 4.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- -15V
- Radiation Hardening :
- No
- Packaging :
- Cut Tape (CT)
- Power Dissipation :
- 504mW
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 16 Weeks
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- FET Type :
- P-Channel
- Voltage - Rated DC :
- -15V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 1.5A, 10V
- Thickness :
- 1mm
- Continuous Drain Current (ID) :
- 1.27A
- Gate to Source Voltage (Vgs) :
- 2V
- Terminal Position :
- Dual
- Turn-Off Delay Time :
- 13 ns
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.4Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- JESD-609 Code :
- e4
- Base Part Number :
- TPS1100
- Current Rating :
- -1.27mA
- Vgs (Max) :
- +2V, -15V
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 10 ns
- Terminal Form :
- Gull wing
- Datasheets
- TPS1100PWR

P-Channel Cut Tape (CT) 180m Ω @ 1.5A, 10V +2V, -15V 5.45nC @ 10V 15V 8-TSSOP (0.173, 4.40mm Width)
TPS1100PWR Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.27A.With a drain-source breakdown voltage of -15V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -15V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 15V.Using drive voltage (2.7V 10V) reduces this device's overall power consumption.
TPS1100PWR Features
a continuous drain current (ID) of 1.27A
a drain-to-source breakdown voltage of -15V voltage
the turn-off delay time is 13 ns
a 15V drain to source voltage (Vdss)
TPS1100PWR Applications
There are a lot of Texas Instruments
TPS1100PWR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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