TPS1101PWR
- Mfr.Part #
- TPS1101PWR
- Manufacturer
- Texas Instruments
- Package / Case
- 16-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 2.18A 16TSSOP
- Stock
- 16,520
- In Stock :
- 16,520
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Case Connection :
- Isolated
- Packaging :
- Cut Tape (CT)
- Drain-source On Resistance-Max :
- 0.19Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 6.5 ns
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 16
- Operating Temperature :
- -40°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 11.25nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Vgs (Max) :
- +2V, -15V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e4
- Package / Case :
- 16-TSSOP (0.173, 4.40mm Width)
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.5A, 10V
- Drain to Source Breakdown Voltage :
- 15V
- Turn-Off Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Continuous Drain Current (ID) :
- 2.18A
- Rise Time :
- 5.5ns
- Factory Lead Time :
- 6 Weeks
- Pin Count :
- 16
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -2.18A
- Gate to Source Voltage (Vgs) :
- 2V
- Width :
- 4.4mm
- Base Part Number :
- TPS1101
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Transistor Element Material :
- SILICON
- Length :
- 5mm
- Number of Pins :
- 16
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 5.5 ns
- Thickness :
- 1mm
- Voltage - Rated DC :
- -15V
- Power Dissipation :
- 710mW
- Pbfree Code :
- yes
- Height :
- 1.2mm
- Power Dissipation-Max :
- 710mW Ta
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 2.18A Ta
- HTS Code :
- 8542.39.00.01
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Datasheets
- TPS1101PWR

P-Channel Cut Tape (CT) 90m Ω @ 2.5A, 10V +2V, -15V 11.25nC @ 10V 16-TSSOP (0.173, 4.40mm Width)
TPS1101PWR Overview
The drain current is the maximum continuous current the device can conduct, and this device has 2.18A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 15V, and this device has a drainage-to-source breakdown voltage of 15VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 2V to 1.Using drive voltage (2.7V 10V), this device contributes to a reduction in overall power consumption.
TPS1101PWR Features
a continuous drain current (ID) of 2.18A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
TPS1101PWR Applications
There are a lot of Texas Instruments
TPS1101PWR applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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