TPS1101D
- Mfr.Part #
- TPS1101D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 2.3A 8SOIC
- Stock
- 28
- In Stock :
- 28
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Pbfree Code :
- yes
- Pin Count :
- 8
- Vgs (Max) :
- +2V, -15V
- Factory Lead Time :
- 6 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- TPS1101
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 19 ns
- Length :
- 4.9mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11.25nC @ 10V
- Terminal Position :
- Dual
- Rise Time :
- 5.5ns
- Number of Elements :
- 1
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 5.5 ns
- FET Type :
- P-Channel
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 15V
- Thickness :
- 1.58mm
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Height :
- 1.75mm
- RoHS Status :
- ROHS3 Compliant
- Output Current :
- 2.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- -2.3A
- Gate to Source Voltage (Vgs) :
- 2V
- Output Voltage :
- -15V
- Element Configuration :
- Single
- Power Dissipation :
- 791mW
- Power Dissipation-Max :
- 791mW Ta
- Current Rating :
- -2.3A
- JESD-609 Code :
- e4
- Number of Terminations :
- 8
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 6.5 ns
- Nominal Vgs :
- -1.25 V
- Operating Temperature :
- -40°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.5A, 10V
- Width :
- 3.91mm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -15V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Datasheets
- TPS1101D

P-Channel Tube 90m Ω @ 2.5A, 10V +2V, -15V 11.25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
TPS1101D Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.3A.With a drain-source breakdown voltage of 15V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 15V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 19 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 10V) reduces this device's overall power consumption.
TPS1101D Features
a continuous drain current (ID) of -2.3A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
TPS1101D Applications
There are a lot of Texas Instruments
TPS1101D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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