TPS1101D
- Mfr.Part #
- TPS1101D
- Manufacturer
- Texas Instruments
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 15V 2.3A 8SOIC
- Stock
- 28
- In Stock :
- 28
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- -2.3A
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminations :
- 8
- Voltage - Rated DC :
- -15V
- Thickness :
- 1.58mm
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Nominal Vgs :
- -1.25 V
- Power Dissipation :
- 791mW
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Packaging :
- Tube
- FET Type :
- P-Channel
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Height :
- 1.75mm
- Pin Count :
- 8
- Rise Time :
- 5.5ns
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- +2V, -15V
- Length :
- 4.9mm
- Base Part Number :
- TPS1101
- Power Dissipation-Max :
- 791mW Ta
- Width :
- 3.91mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11.25nC @ 10V
- Fall Time (Typ) :
- 5.5 ns
- Mount :
- Surface Mount
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Turn-Off Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 10V
- Turn On Delay Time :
- 6.5 ns
- Gate to Source Voltage (Vgs) :
- 2V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Output Current :
- 2.3A
- JESD-609 Code :
- e4
- Current Rating :
- -2.3A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 2.5A, 10V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 15V
- Output Voltage :
- -15V
- Datasheets
- TPS1101D

P-Channel Tube 90m Ω @ 2.5A, 10V +2V, -15V 11.25nC @ 10V 8-SOIC (0.154, 3.90mm Width)
TPS1101D Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.3A.With a drain-source breakdown voltage of 15V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 15V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 19 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (2.7V 10V) reduces this device's overall power consumption.
TPS1101D Features
a continuous drain current (ID) of -2.3A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
TPS1101D Applications
There are a lot of Texas Instruments
TPS1101D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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