TPS1120D

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Thickness :

1.58mm

Power Dissipation :

840mW

JESD-609 Code :

e4

Output Voltage :

-15V

Number of Pins :

8

Turn On Delay Time :

4.5 ns

Packaging :

Tube

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

1.17A

Pbfree Code :

yes

REACH SVHC :

No SVHC

Rise Time :

10ns

Current Rating :

-1.7A

Fall Time (Typ) :

10 ns

Drain-source On Resistance-Max :

0.4Ohm

Lead Free :

Lead Free

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-15V

Operating Temperature :

-40°C~150°C TJ

Gate to Source Voltage (Vgs) :

2V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Height :

1.75mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Length :

4.9mm

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate

Threshold Voltage :

-1.25V

Transistor Application :

SWITCHING

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

13 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Base Part Number :

TPS1120

Number of Elements :

2

Drain to Source Breakdown Voltage :

15V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Mounting Type :

Surface Mount

Width :

3.91mm

Max Power Dissipation :

840mW

Radiation Hardening :

No