TPS1101DR

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

2V

Mounting Type :

Surface Mount

Height :

1.75mm

Rise Time :

5.5ns

Turn On Delay Time :

6.5 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.3A

Radiation Hardening :

No

Base Part Number :

TPS1101

Lead Free :

Lead Free

Power Dissipation-Max :

791mW Ta

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Fall Time (Typ) :

5.5 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.5A, 10V

Case Connection :

Isolated

Number of Pins :

8

Drain to Source Breakdown Voltage :

15V

Thickness :

1.58mm

RoHS Status :

ROHS3 Compliant

Width :

3.91mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain Current-Max (Abs) (ID) :

0.62A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Pin Count :

8

Factory Lead Time :

6 Weeks

Operating Temperature :

-40°C~150°C TJ

JESD-609 Code :

e4

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

11.25nC @ 10V

Length :

4.9mm

Additional Feature :

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 10V

Vgs (Max) :

+2V, -15V

Power Dissipation :

791mW

Number of Terminations :

8

Turn-Off Delay Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Transistor Application :

SWITCHING

Number of Elements :

1