SI7956DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchFET®

Power Dissipation :

1.4W

Width :

5.89mm

Terminal Form :

C BEND

Continuous Drain Current (ID) :

4.1A

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Weight :

506.605978mg

Package / Case :

PowerPAK® SO-8 Dual

Pbfree Code :

yes

Turn-Off Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

2.6A

Length :

4.9mm

Published :

2013

Height :

1.04mm

Turn On Delay Time :

13 ns

Fall Time (Typ) :

36 ns

Number of Elements :

2

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Drain to Source Breakdown Voltage :

150V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Base Part Number :

SI7956

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.105Ohm

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

105m Ω @ 4.1A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.4W

JESD-30 Code :

R-XDSO-C6

Mount :

Surface Mount

Rise Time :

36ns

Pin Count :

8

Vgs(th) (Max) @ Id :

4V @ 250µA