SI5936DU-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

TrenchFET®

Contact Plating :

Tin

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Max Power Dissipation :

2.3W

Fall Time (Typ) :

10 ns

Drain to Source Voltage (Vdss) :

30V

Published :

2016

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6A

Drain-source On Resistance-Max :

0.03Ohm

DS Breakdown Voltage-Min :

30V

Terminal Form :

NO LEAD

Packaging :

Cut Tape (CT)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Turn-Off Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.3W

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Rds On (Max) @ Id, Vgs :

30m Ω @ 5A, 10V

Number of Elements :

2

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® ChipFET™ Dual

Power - Max :

10.4W

Width :

1.98mm

Gate to Source Voltage (Vgs) :

20V

Length :

3.08mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-N6

Factory Lead Time :

14 Weeks

FET Feature :

Logic Level Gate

Height :

850μm

Continuous Drain Current (ID) :

6A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

65ns