SI5905DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Turn-Off Delay Time :

30 ns

Resistance :

90mOhm

Terminal Form :

C BEND

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Rise Time :

45ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Terminations :

8

Element Configuration :

Dual

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

FET Feature :

Logic Level Gate

DS Breakdown Voltage-Min :

8V

Continuous Drain Current (ID) :

3A

Fall Time (Typ) :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.1W

Series :

TrenchFET®

Lead Free :

Lead Free

Number of Elements :

2

Base Part Number :

SI5905

Mounting Type :

Surface Mount

Package / Case :

8-SMD, Flat Lead

Rds On (Max) @ Id, Vgs :

90m Ω @ 3A, 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

3A

Pin Count :

8

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

FET Type :

2 P-Channel (Dual)