SI5913DC-T1-GE3
- Mfr.Part #
- SI5913DC-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 1206-8
- Stock
- 1,426
- In Stock :
- 1,426
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 18 ns
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 20V
- Fall Time (Typ) :
- 10 ns
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Rise Time :
- 40ns
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 4A
- Reach Compliance Code :
- Unknown
- Weight :
- 84.99187mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 8
- FET Feature :
- Schottky Diode (Isolated)
- Pin Count :
- 8
- Series :
- LITTLE FOOT®
- Continuous Drain Current (ID) :
- 3.7A
- Drain to Source Breakdown Voltage :
- -20V
- Rds On (Max) @ Id, Vgs :
- 84m Ω @ 3.7A, 10V
- Power Dissipation-Max :
- 1.7W Ta 3.1W Tc
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Vgs (Max) :
- ±12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- Package / Case :
- 8-SMD, Flat Lead
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 18 ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 12V
- Terminal Form :
- C BEND
- Terminal Finish :
- PURE MATTE TIN
- Published :
- 2013
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 10V
- Datasheets
- SI5913DC-T1-GE3
P-Channel Tape & Reel (TR) 84m Ω @ 3.7A, 10V ±12V 330pF @ 10V 12nC @ 10V 20V 8-SMD, Flat Lead
SI5913DC-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 330pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 18 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 10V).
SI5913DC-T1-GE3 Features
a continuous drain current (ID) of 3.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 18 ns
a 20V drain to source voltage (Vdss)
SI5913DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5913DC-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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