SI5902BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

14 Weeks

Rise Time :

12ns

Drain to Source Resistance :

65mOhm

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Width :

1.65mm

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

Min Operating Temperature :

-55°C

Series :

TrenchFET®

Turn On Delay Time :

4 ns

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Power - Max :

3.12W

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

Rds On Max :

65 mΩ

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Length :

3.05mm

Supplier Device Package :

1206-8 ChipFET™

Continuous Drain Current (ID) :

4A

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Element Configuration :

Dual

Number of Pins :

8

Input Capacitance :

220pF

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.5W

Base Part Number :

SI5902

Weight :

84.99187mg

Rds On (Max) @ Id, Vgs :

65mOhm @ 3.1A, 10V

Number of Channels :

2

FET Feature :

Logic Level Gate

Package / Case :

8-SMD, Flat Lead

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

10 ns

Max Power Dissipation :

3.12W

Resistance :

65mOhm