SI5902DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Fall Time (Typ) :

12 ns

FET Type :

2 N-Channel (Dual)

Length :

3.1mm

Base Part Number :

SI5902

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Rise Time :

12ns

Mounting Type :

Surface Mount

Power Dissipation :

1.1W

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Series :

TrenchFET®

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

ECCN Code :

EAR99

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

2.9A

Terminal Form :

C BEND

Turn-Off Delay Time :

12 ns

Package / Case :

8-SMD, Flat Lead

Number of Terminations :

8

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7 ns

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Height :

1.1mm

Max Power Dissipation :

1.1W

Width :

1.7mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1V

Resistance :

85mOhm