SI5902DC-T1-E3
- Mfr.Part #
- SI5902DC-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 2.9A 1206-8
- Stock
- 10,100
- In Stock :
- 10,100
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- Logic Level Gate
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 8
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Terminal Finish :
- MATTE TIN
- Terminal Form :
- C BEND
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 2.9A
- Length :
- 3.1mm
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 12 ns
- Number of Elements :
- 2
- Resistance :
- 85mOhm
- REACH SVHC :
- No SVHC
- Width :
- 1.7mm
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 1V
- Height :
- 1.1mm
- Element Configuration :
- Dual
- Packaging :
- Tape and Reel (TR)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rise Time :
- 12ns
- Drain to Source Voltage (Vdss) :
- 30V
- Turn On Delay Time :
- 7 ns
- Published :
- 2009
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.1W
- Number of Pins :
- 8
- Base Part Number :
- SI5902
- Mount :
- Surface Mount
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1.1W
- ECCN Code :
- EAR99
- Package / Case :
- 8-SMD, Flat Lead
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- 2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 2.9A, 10V
- Fall Time (Typ) :
- 12 ns
- Lead Free :
- Lead Free
- Datasheets
- SI5902DC-T1-E3
SI5902DC-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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