SI5902DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

7 ns

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Fall Time (Typ) :

12 ns

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.1W

Radiation Hardening :

No

Resistance :

85mOhm

ECCN Code :

EAR99

Lead Free :

Lead Free

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Power Dissipation :

1.1W

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

C BEND

Package / Case :

8-SMD, Flat Lead

Operating Temperature :

-55°C~150°C TJ

Width :

1.7mm

Turn-Off Delay Time :

12 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Rise Time :

12ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Length :

3.1mm

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Number of Elements :

2

Element Configuration :

Dual

Published :

2009

Base Part Number :

SI5902

Threshold Voltage :

1V

Continuous Drain Current (ID) :

2.9A

Height :

1.1mm

JESD-609 Code :

e3