SI5902DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Number of Pins :

8

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Resistance :

85mOhm

Turn-Off Delay Time :

12 ns

Threshold Voltage :

1V

Number of Terminations :

8

Mounting Type :

Surface Mount

Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN

Max Power Dissipation :

1.1W

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Package / Case :

8-SMD, Flat Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Published :

2009

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Length :

3.1mm

Continuous Drain Current (ID) :

2.9A

Turn On Delay Time :

7 ns

FET Feature :

Logic Level Gate

Base Part Number :

SI5902

REACH SVHC :

No SVHC

Width :

1.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Dual

JESD-609 Code :

e3

Height :

1.1mm

Rise Time :

12ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V