SI5908DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

30 ns

Number of Elements :

2

Element Configuration :

Dual

Terminal Form :

C BEND

Gate to Source Voltage (Vgs) :

8V

Threshold Voltage :

1V

Mount :

Surface Mount

Turn On Delay Time :

20 ns

Power Dissipation :

1.1W

Published :

2011

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4.4A

Continuous Drain Current (ID) :

5.9A

Package / Case :

8-SMD, Flat Lead

Length :

3.05mm

Number of Pins :

8

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.4A, 4.5V

Factory Lead Time :

14 Weeks

Weight :

84.99187mg

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

SI5908

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Rise Time :

36ns

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Series :

TrenchFET®

ECCN Code :

EAR99

Pbfree Code :

yes

Transistor Application :

SWITCHING

Fall Time (Typ) :

36 ns

Drain-source On Resistance-Max :

0.04Ohm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.4A

Height :

1.1mm

FET Feature :

Logic Level Gate

Width :

1.65mm

Max Power Dissipation :

1.1W

Radiation Hardening :

No