SI5908DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Transistor Application :

SWITCHING

Width :

1.65mm

Number of Pins :

8

Drain-source On Resistance-Max :

0.04Ohm

Radiation Hardening :

No

Fall Time (Typ) :

36 ns

Continuous Drain Current (ID) :

5.9A

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Length :

3.05mm

Mount :

Surface Mount

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

C BEND

Turn-Off Delay Time :

30 ns

Max Power Dissipation :

1.1W

REACH SVHC :

Unknown

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.4A

Rise Time :

36ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

2

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Turn On Delay Time :

20 ns

Weight :

84.99187mg

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Published :

2011

Base Part Number :

SI5908

Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

4.4A

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Package / Case :

8-SMD, Flat Lead

Number of Terminations :

8

Drain to Source Breakdown Voltage :

20V

Series :

TrenchFET®

FET Type :

2 N-Channel (Dual)

Threshold Voltage :

1V

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.4A, 4.5V