SI5908DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SMD, Flat Lead

Turn-Off Delay Time :

30 ns

Width :

1.65mm

Published :

2011

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Dual

JESD-609 Code :

e3

Power Dissipation :

1.1W

Number of Pins :

8

Weight :

84.99187mg

Fall Time (Typ) :

36 ns

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.4A, 4.5V

Case Connection :

DRAIN

Length :

3.05mm

REACH SVHC :

Unknown

Continuous Drain Current (ID) :

5.9A

Factory Lead Time :

14 Weeks

Threshold Voltage :

1V

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

20 ns

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

4.4A

Base Part Number :

SI5908

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.04Ohm

FET Type :

2 N-Channel (Dual)

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

4.4A

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Series :

TrenchFET®

Mount :

Surface Mount

Height :

1.1mm

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

C BEND

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Rise Time :

36ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8